APA

Shin H., Jang Y., Kim T., Lee J., Oh D., Ahn S. J., Lee J. H., Moon Y., Park J., Yoo S. J., Park C., Whang D., Yang C. & Ahn J. R. (20150824). Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor. : Journal of the American Chemical Society.

Chicago

Shin Ha-Chul, Jang Yamujin, Kim Tae-Hoon, Lee Jun-Hae, Oh Dong-Hwa, Ahn Sung Joon, Lee Jae Hyun, Moon Youngkwon, Park Ji-Hoon, Yoo Sung Jong, Park Chong-Yun, Whang Dongmok, Yang Cheol-Woong and Ahn Joung Real. 20150824. Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor. : Journal of the American Chemical Society.

Harvard

Shin H., Jang Y., Kim T., Lee J., Oh D., Ahn S. J., Lee J. H., Moon Y., Park J., Yoo S. J., Park C., Whang D., Yang C. and Ahn J. R. (20150824). Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor. : Journal of the American Chemical Society.

MLA

Shin Ha-Chul, Jang Yamujin, Kim Tae-Hoon, Lee Jun-Hae, Oh Dong-Hwa, Ahn Sung Joon, Lee Jae Hyun, Moon Youngkwon, Park Ji-Hoon, Yoo Sung Jong, Park Chong-Yun, Whang Dongmok, Yang Cheol-Woong and Ahn Joung Real. Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor. : Journal of the American Chemical Society. 20150824.