Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-silicon. [electronic resource]

By: Contributor(s): Producer: 20080103Description: 4135-8 p. digitalISSN:
  • 1533-4880
Subject(s): In: Journal of nanoscience and nanotechnology vol. 7
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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