Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy. [electronic resource]

By: Contributor(s): Producer: 20050516Description: 500-2 p. digitalISSN:
  • 0909-0495
Online resources: In: Journal of synchrotron radiation vol. 6
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Publication Type: Journal Article

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