Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics. [electronic resource]

By: Contributor(s): Producer: 20160811Description: 4753-7 p. digitalISSN:
  • 1533-4899
Online resources: In: Journal of nanoscience and nanotechnology vol. 16
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Publication Type: Journal Article

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