Surface states- and field-effects at p- and n-doped GaAs(111)A/solution interface. [electronic resource]

By: Contributor(s): Producer: 20090506Description: 1765-70 p. digitalISSN:
  • 1463-9076
Online resources: In: Physical chemistry chemical physics : PCCP vol. 11
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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