A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode. [electronic resource]
Producer: 20090616Description: 085303 p. digitalISSN:- 1361-6528
- Aluminum Compounds -- chemistry
- Aluminum Oxide -- chemistry
- Crystallization -- methods
- Electrodes
- Equipment Design
- Equipment Failure Analysis
- Gallium -- chemistry
- Lighting -- instrumentation
- Macromolecular Substances -- chemistry
- Materials Testing
- Molecular Conformation
- Nanostructures -- chemistry
- Nanotechnology -- methods
- Particle Size
- Porosity
- Surface Properties
No physical items for this record
Publication Type: Journal Article; Research Support, Non-U.S. Gov't
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