APA

Hazdra P., Oswald J., Komarnitskyy V., Kuldová K., Hospodková A., Hulicius E. & Pangrác J. (20111219). Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands. : Journal of nanoscience and nanotechnology.

Chicago

Hazdra P, Oswald J, Komarnitskyy V, Kuldová K, Hospodková A, Hulicius E and Pangrác J. 20111219. Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands. : Journal of nanoscience and nanotechnology.

Harvard

Hazdra P., Oswald J., Komarnitskyy V., Kuldová K., Hospodková A., Hulicius E. and Pangrác J. (20111219). Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands. : Journal of nanoscience and nanotechnology.

MLA

Hazdra P, Oswald J, Komarnitskyy V, Kuldová K, Hospodková A, Hulicius E and Pangrác J. Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands. : Journal of nanoscience and nanotechnology. 20111219.