APA

Chang W. H., Lee C. H., Chang Y. C., Chang P., Huang M. L., Lee Y. J., Hsu C., Hong J. M., Tsai C. C., Kwo J. R. & Hong M. (20141108). Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology. : Advanced materials (Deerfield Beach, Fla.).

Chicago

Chang Wen Hsin, Lee Chih Hsun, Chang Yao Chung, Chang Pen, Huang Mao Lin, Lee Yi Jun, Hsu Chia-Hung, Hong J Minghuang, Tsai Chiung Chi, Kwo J Raynien and Hong Minghwei. 20141108. Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology. : Advanced materials (Deerfield Beach, Fla.).

Harvard

Chang W. H., Lee C. H., Chang Y. C., Chang P., Huang M. L., Lee Y. J., Hsu C., Hong J. M., Tsai C. C., Kwo J. R. and Hong M. (20141108). Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology. : Advanced materials (Deerfield Beach, Fla.).

MLA

Chang Wen Hsin, Lee Chih Hsun, Chang Yao Chung, Chang Pen, Huang Mao Lin, Lee Yi Jun, Hsu Chia-Hung, Hong J Minghuang, Tsai Chiung Chi, Kwo J Raynien and Hong Minghwei. Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology. : Advanced materials (Deerfield Beach, Fla.). 20141108.