APA

He J., Reyner C. J., Liang B. L., Nunna K., Huffaker D. L., Pavarelli N., Gradkowski K., Ochalski T. J., Huyet G., Dorogan V. G., Mazur Y. I. & Salamo G. J. (20101122). Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. : Nano letters.

Chicago

He J, Reyner C J, Liang B L, Nunna K, Huffaker D L, Pavarelli N, Gradkowski K, Ochalski T J, Huyet G, Dorogan V G, Mazur Yu I and Salamo G J. 20101122. Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. : Nano letters.

Harvard

He J., Reyner C. J., Liang B. L., Nunna K., Huffaker D. L., Pavarelli N., Gradkowski K., Ochalski T. J., Huyet G., Dorogan V. G., Mazur Y. I. and Salamo G. J. (20101122). Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. : Nano letters.

MLA

He J, Reyner C J, Liang B L, Nunna K, Huffaker D L, Pavarelli N, Gradkowski K, Ochalski T J, Huyet G, Dorogan V G, Mazur Yu I and Salamo G J. Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. : Nano letters. 20101122.