Your search returned 7 results.

Results
	1.	Materials science. Silicon carbide as a platform for power electronics. [electronic resource] by Eddy, C R Gaskill, D K Producer: 20090623 In: Science (New York, N.Y.) vol. 324 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	2.	Determining the nature of the gap in semiconducting graphene. [electronic resource] by Prestigiacomo, J C Nath, A Osofsky, M S Hernández, S C Wheeler, V D Walton, S G Gaskill, D K Producer: 20180720 In: Scientific reports vol. 7 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	3.	Functionalized graphene as a model system for the two-dimensional metal-insulator transition. [electronic resource] by Osofsky, M S Hernández, S C Nath, A Wheeler, V D Walton, S G Krowne, C M Gaskill, D K Producer: 20160914 In: Scientific reports vol. 6 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	4.	Surface potential and thin film quality of low work function metals on epitaxial graphene. [electronic resource] by DeJarld, Matthew Campbell, Paul M Friedman, Adam L Currie, Marc Myers-Ward, Rachael L Boyd, Anthony K Rosenberg, Samantha G Pavunny, Shojan P Daniels, Kevin M Gaskill, D K Publication details: Scientific reports Nov 2018 In: Scientific reports vol. 8 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	5.	Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect. [electronic resource] by Kühne, P Darakchieva, V Yakimova, R Tedesco, J D Myers-Ward, R L Eddy, C R Gaskill, D K Herzinger, C M Woollam, J A Schubert, M Hofmann, T Producer: 20131022 In: Physical review letters vol. 111 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	6.	Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene. [electronic resource] by Huang, J Alexander-Webber, J A Janssen, T J B M Tzalenchuk, A Yager, T Lara-Avila, S Kubatkin, S Myers-Ward, R L Wheeler, V D Gaskill, D K Nicholas, R J Producer: 20150825 In: Journal of physics. Condensed matter : an Institute of Physics journal vol. 27 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	7.	Bilayer graphene grown on 4H-SiC (0001) step-free mesas. [electronic resource] by Nyakiti, L O Myers-Ward, R L Wheeler, V D Imhoff, E A Bezares, F J Chun, H Caldwell, J D Friedman, A L Matis, B R Baldwin, J W Campbell, P M Culbertson, J C Eddy, C R Jernigan, G G Gaskill, D K Producer: 20120904 In: Nano letters vol. 12 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)