APA

Mikhaylov A. N., Tetelbaum D. I., Burdov V. A., Gorshkov O. N., Belov A. I., Kambarov D. A., Belyakov V. A., Vasiliev V. K., Kovalev A. I. & Gaponova D. M. (20080603). Effect of ion doping with donor and acceptor impurities on intensity and lifetime of photoluminescence from SiO2 films with silicon quantum dots. : Journal of nanoscience and nanotechnology.

Chicago

Mikhaylov A N, Tetelbaum D I, Burdov V A, Gorshkov O N, Belov A I, Kambarov D A, Belyakov V A, Vasiliev V K, Kovalev A I and Gaponova D M. 20080603. Effect of ion doping with donor and acceptor impurities on intensity and lifetime of photoluminescence from SiO2 films with silicon quantum dots. : Journal of nanoscience and nanotechnology.

Harvard

Mikhaylov A. N., Tetelbaum D. I., Burdov V. A., Gorshkov O. N., Belov A. I., Kambarov D. A., Belyakov V. A., Vasiliev V. K., Kovalev A. I. and Gaponova D. M. (20080603). Effect of ion doping with donor and acceptor impurities on intensity and lifetime of photoluminescence from SiO2 films with silicon quantum dots. : Journal of nanoscience and nanotechnology.

MLA

Mikhaylov A N, Tetelbaum D I, Burdov V A, Gorshkov O N, Belov A I, Kambarov D A, Belyakov V A, Vasiliev V K, Kovalev A I and Gaponova D M. Effect of ion doping with donor and acceptor impurities on intensity and lifetime of photoluminescence from SiO2 films with silicon quantum dots. : Journal of nanoscience and nanotechnology. 20080603.