APA

Sun J., Peng M., Zhang Y., Zhang L., Peng R., Miao C., Liu D., Han M., Feng R., Ma Y., Dai Y., He L., Shan C., Pan A., Hu W. & Yang Z. (2019). Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors. : Nano letters.

Chicago

Sun Jiamin, Peng Meng, Zhang Yushuang, Zhang Lei, Peng Rui, Miao Chengcheng, Liu Dong, Han Mingming, Feng Runfa, Ma Yandong, Dai Ying, He Longbing, Shan Chongxin, Pan Anlian, Hu Weida and Yang Zai-Xing. 2019. Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors. : Nano letters.

Harvard

Sun J., Peng M., Zhang Y., Zhang L., Peng R., Miao C., Liu D., Han M., Feng R., Ma Y., Dai Y., He L., Shan C., Pan A., Hu W. and Yang Z. (2019). Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors. : Nano letters.

MLA

Sun Jiamin, Peng Meng, Zhang Yushuang, Zhang Lei, Peng Rui, Miao Chengcheng, Liu Dong, Han Mingming, Feng Runfa, Ma Yandong, Dai Ying, He Longbing, Shan Chongxin, Pan Anlian, Hu Weida and Yang Zai-Xing. Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors. : Nano letters. 2019.