Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps. [electronic resource]

By: Contributor(s): Producer: 20180831ISSN:
  • 1424-8220
Online resources: In: Sensors (Basel, Switzerland) vol. 18
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Publication Type: Journal Article

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