Schottky barrier mediated single-polarity resistive switching in Pt layer-included TiO(x) memory device. [electronic resource]

By: Contributor(s): Producer: 20111021Description: 1918-24 p. digitalISSN:
  • 1944-8252
Subject(s): Online resources: In: ACS applied materials & interfaces vol. 3
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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