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	1.	Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface. [electronic resource] by Rahaman, Sheikh Ziaur Maikap, Siddheswar Tien, Ta-Chang Lee, Heng-Yuan Chen, Wei-Su Chen, Frederick T Kao, Ming-Jer Tsai, Ming-Jinn Producer: 20121002 In: Nanoscale research letters vol. 7 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	2.	Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots. [electronic resource] by Banerjee, Writam Maikap, Siddheswar Lai, Chao-Sung Chen, Yi-Yan Tien, Ta-Chang Lee, Heng-Yuan Chen, Wei-Su Chen, Frederick T Kao, Ming-Jer Tsai, Ming-Jinn Yang, Jer-Ren Producer: 20121002 In: Nanoscale research letters vol. 7 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	3.	Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte. [electronic resource] by Rahaman, Sheikh Ziaur Maikap, Siddheswar Das, Atanu Prakash, Amit Wu, Ya Hsuan Lai, Chao-Sung Tien, Ta-Chang Chen, Wei-Su Lee, Heng-Yuan Chen, Frederick T Tsai, Ming-Jinn Chang, Liann-Be Producer: 20121220 In: Nanoscale research letters vol. 7 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	4.	Experimental investigation of the reliability issue of RRAM based on high resistance state conduction. [electronic resource] by Zhang, Lijie Hsu, Yen-Ya Chen, Frederick T Lee, Heng-Yuan Chen, Yu-Sheng Chen, Wei-Su Gu, Pei-Yi Liu, Wen-Hsing Wang, Shun-Min Tsai, Chen-Han Huang, Ru Tsai, Ming-Jinn Producer: 20110902 In: Nanotechnology vol. 22 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)