Properties of Cu(thd)2 as a precursor to prepare Cu/SiO2 catalyst using the atomic layer epitaxy technique. [electronic resource]

By: Contributor(s): Producer: 20070220Description: 15950-1 p. digitalISSN:
  • 0002-7863
Online resources: In: Journal of the American Chemical Society vol. 128
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Publication Type: Journal Article

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