APA

Ke W., Tesfay S. T., Seong T., Liang Z., Chiang C., Chen C., Son W., Chang K. & Lin J. (20191230). Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer. : ACS applied materials & interfaces.

Chicago

Ke Wen-Cheng, Tesfay Solomun Teklahymanot, Seong Tae-Yeon, Liang Zhong-Yi, Chiang Chih-Yung, Chen Chieh-Yi, Son Widi, Chang Kuo-Jen and Lin Jia-Ching. 20191230. Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer. : ACS applied materials & interfaces.

Harvard

Ke W., Tesfay S. T., Seong T., Liang Z., Chiang C., Chen C., Son W., Chang K. and Lin J. (20191230). Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer. : ACS applied materials & interfaces.

MLA

Ke Wen-Cheng, Tesfay Solomun Teklahymanot, Seong Tae-Yeon, Liang Zhong-Yi, Chiang Chih-Yung, Chen Chieh-Yi, Son Widi, Chang Kuo-Jen and Lin Jia-Ching. Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer. : ACS applied materials & interfaces. 20191230.