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Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment. [electronic resource] by
- Xu, Lei
- Chen, Qian
- Liao, Lei
- Liu, Xingqiang
- Chang, Ting-Chang
- Chang, Kuan-Chang
- Tsai, Tsung-Ming
- Jiang, Changzhong
- Wang, Jinlan
- Li, Jinchai
Producer: 20160708
In:
ACS applied materials & interfaces vol. 8
Availability: No items available.
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Nonvolatile reconfigurable sequential logic in a HfO [electronic resource] by
- Zhou, Ya-Xiong
- Li, Yi
- Su, Yu-Ting
- Wang, Zhuo-Rui
- Shih, Ling-Yi
- Chang, Ting-Chang
- Chang, Kuan-Chang
- Long, Shi-Bing
- Sze, Simon M
- Miao, Xiang-Shui
Producer: 20180720
In:
Nanoscale vol. 9
Availability: No items available.
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Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography. [electronic resource] by
- Ji, Li
- Chang, Yao-Feng
- Fowler, Burt
- Chen, Ying-Chen
- Tsai, Tsung-Ming
- Chang, Kuan-Chang
- Chen, Min-Chen
- Chang, Ting-Chang
- Sze, Simon M
- Yu, Edward T
- Lee, Jack C
Producer: 20150330
In:
Nano letters vol. 14
Availability: No items available.
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Conduction Mechanism and Improved Endurance in HfO [electronic resource] by
- Yuan, Fang-Yuan
- Deng, Ning
- Shih, Chih-Cheng
- Tseng, Yi-Ting
- Chang, Ting-Chang
- Chang, Kuan-Chang
- Wang, Ming-Hui
- Chen, Wen-Chung
- Zheng, Hao-Xuan
- Wu, Huaqiang
- Qian, He
- Sze, Simon M
Publication details: Nanoscale research letters Oct 2017
In:
Nanoscale research letters vol. 12
Availability: No items available.
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11.
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Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar. [electronic resource] by
- Li, Yi
- Zhou, Ya-Xiong
- Xu, Lei
- Lu, Ke
- Wang, Zhuo-Rui
- Duan, Nian
- Jiang, Lei
- Cheng, Long
- Chang, Ting-Chang
- Chang, Kuan-Chang
- Sun, Hua-Jun
- Xue, Kan-Hao
- Miao, Xiang-Shui
Producer: 20180718
In:
ACS applied materials & interfaces vol. 8
Availability: No items available.
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12.
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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory. [electronic resource] by
- Chen, Yi-Jiun
- Chen, Hsin-Lu
- Young, Tai-Fa
- Chang, Ting-Chang
- Tsai, Tsung-Ming
- Chang, Kuan-Chang
- Zhang, Rui
- Chen, Kai-Huang
- Lou, Jen-Chung
- Chu, Tian-Jian
- Chen, Jung-Hui
- Bao, Ding-Hua
- Sze, Simon M
Producer: 20140212
In:
Nanoscale research letters vol. 9
Availability: No items available.
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13.
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Resistance Switching Characteristics Induced by O [electronic resource] by
- Chen, Po-Hsun
- Chang, Ting-Chang
- Chang, Kuan-Chang
- Tsai, Tsung-Ming
- Pan, Chih-Hung
- Chen, Min-Chen
- Su, Yu-Ting
- Lin, Chih-Yang
- Tseng, Yi-Ting
- Huang, Hui-Chun
- Wu, Huaqiang
- Deng, Ning
- Qian, He
- Sze, Simon M
Producer: 20180730
In:
ACS applied materials & interfaces vol. 9
Availability: No items available.
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Physical and chemical mechanisms in oxide-based resistance random access memory. [electronic resource] by
- Chang, Kuan-Chang
- Chang, Ting-Chang
- Tsai, Tsung-Ming
- Zhang, Rui
- Hung, Ya-Chi
- Syu, Yong-En
- Chang, Yao-Feng
- Chen, Min-Chen
- Chu, Tian-Jian
- Chen, Hsin-Lu
- Pan, Chih-Hung
- Shih, Chih-Cheng
- Zheng, Jin-Cheng
- Sze, Simon M
Producer: 20150415
In:
Nanoscale research letters vol. 10
Availability: No items available.
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Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO [electronic resource] by
- Lin, Chih-Yang
- Chen, Po-Hsun
- Chang, Ting-Chang
- Chang, Kuan-Chang
- Zhang, Sheng-Dong
- Tsai, Tsung-Ming
- Pan, Chih-Hung
- Chen, Min-Chen
- Su, Yu-Ting
- Tseng, Yi-Ting
- Chang, Yao-Feng
- Chen, Ying-Chen
- Huang, Hui-Chun
- Sze, Simon M
Producer: 20180720
In:
Nanoscale vol. 9
Availability: No items available.
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Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer. [electronic resource] by
- Chang, Kuan-Chang
- Huang, Jen-Wei
- Chang, Ting-Chang
- Tsai, Tsung-Ming
- Chen, Kai-Huang
- Young, Tai-Fa
- Chen, Jung-Hui
- Zhang, Rui
- Lou, Jen-Chung
- Huang, Syuan-Yong
- Pan, Yin-Chih
- Huang, Hui-Chun
- Syu, Yong-En
- Gan, Der-Shin
- Bao, Ding-Hua
- Sze, Simon M
Producer: 20140107
In:
Nanoscale research letters vol. 8
Availability: No items available.
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17.
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High performance of graphene oxide-doped silicon oxide-based resistance random access memory. [electronic resource] by
- Zhang, Rui
- Chang, Kuan-Chang
- Chang, Ting-Chang
- Tsai, Tsung-Ming
- Chen, Kai-Huang
- Lou, Jen-Chung
- Chen, Jung-Hui
- Young, Tai-Fa
- Shih, Chih-Cheng
- Yang, Ya-Liang
- Pan, Yin-Chih
- Chu, Tian-Jian
- Huang, Syuan-Yong
- Pan, Chih-Hung
- Su, Yu-Ting
- Syu, Yong-En
- Sze, Simon M
Producer: 20140117
In:
Nanoscale research letters vol. 8
Availability: No items available.
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18.
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Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors. [electronic resource] by
- Chen, Bo-Wei
- Chang, Ting-Chang
- Chang, Kuan-Chang
- Hung, Yu-Ju
- Huang, Shin-Ping
- Chen, Hua-Mao
- Liao, Po-Yung
- Lin, Yu-Ho
- Huang, Hui-Chun
- Chiang, Hsiao-Cheng
- Yang, Chung-I
- Zheng, Yu-Zhe
- Chu, Ann-Kuo
- Li, Hung-Wei
- Tsai, Chih-Hung
- Lu, Hsueh-Hsing
- Wang, Terry Tai-Jui
- Chang, Tsu-Chiang
Producer: 20180726
In:
ACS applied materials & interfaces vol. 9
Availability: No items available.
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