APA

Waman V. S., Kamble M. M., Ghosh S. S., Mayabadi A., Sathe V. G., Amalnekar D. P., Pathan H. M. & Jadkar S. R. (20130404). Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method. : Journal of nanoscience and nanotechnology.

Chicago

Waman V S, Kamble M M, Ghosh S S, Mayabadi Azam, Sathe V G, Amalnekar D P, Pathan H M and Jadkar S R. 20130404. Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method. : Journal of nanoscience and nanotechnology.

Harvard

Waman V. S., Kamble M. M., Ghosh S. S., Mayabadi A., Sathe V. G., Amalnekar D. P., Pathan H. M. and Jadkar S. R. (20130404). Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method. : Journal of nanoscience and nanotechnology.

MLA

Waman V S, Kamble M M, Ghosh S S, Mayabadi Azam, Sathe V G, Amalnekar D P, Pathan H M and Jadkar S R. Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method. : Journal of nanoscience and nanotechnology. 20130404.