APA
Kulevoy T. V., Gerasimenko N. N., Seleznev D. N., Fedorov P. A., Temirov A. A., Alyoshin M. E., Kraevsky S. V., Smirnov D. I., Yakushin P. E. & Khoroshilov V. V. (20120703). Rhenium ion beam for implantation into semiconductors. : The Review of scientific instruments.
Chicago
Kulevoy T V, Gerasimenko N N, Seleznev D N, Fedorov P A, Temirov A A, Alyoshin M E, Kraevsky S V, Smirnov D I, Yakushin P E and Khoroshilov V V. 20120703. Rhenium ion beam for implantation into semiconductors. : The Review of scientific instruments.
Harvard
Kulevoy T. V., Gerasimenko N. N., Seleznev D. N., Fedorov P. A., Temirov A. A., Alyoshin M. E., Kraevsky S. V., Smirnov D. I., Yakushin P. E. and Khoroshilov V. V. (20120703). Rhenium ion beam for implantation into semiconductors. : The Review of scientific instruments.
MLA
Kulevoy T V, Gerasimenko N N, Seleznev D N, Fedorov P A, Temirov A A, Alyoshin M E, Kraevsky S V, Smirnov D I, Yakushin P E and Khoroshilov V V. Rhenium ion beam for implantation into semiconductors. : The Review of scientific instruments. 20120703.