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Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique. [electronic resource] by
- Lee, Sangik
- Hwang, Inrok
- Oh, Sungtaek
- Hong, Sahwan
- Kim, Yeonsoo
- Nam, Yoonseung
- Lee, Keundong
- Yoon, Chansoo
- Kim, Wondong
- Park, Bae Ho
Producer: 20150512
In:
Scientific reports vol. 4
Availability: No items available.
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Flexible resistive random access memory devices by using NiO [electronic resource] by
- Lee, Keundong
- Park, Jong-Woo
- Tchoe, Youngbin
- Yoon, Jiyoung
- Chung, Kunook
- Yoon, Hosang
- Lee, Sangik
- Yoon, Chansoo
- Ho Park, Bae
- Yi, Gyu-Chul
Producer: 20180723
In:
Nanotechnology vol. 28
Availability: No items available.
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Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene. [electronic resource] by
- Lee, Keundong
- Hwang, Inrok
- Lee, Sangik
- Oh, Sungtaek
- Lee, Dukhyun
- Kim, Cheol Kyeom
- Nam, Yoonseung
- Hong, Sahwan
- Yoon, Chansoo
- Morgan, Robert B
- Kim, Hakseong
- Seo, Sunae
- Seo, David H
- Lee, Sangwook
- Park, Bae Ho
Producer: 20160113
In:
Scientific reports vol. 5
Availability: No items available.
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