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Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer. [electronic resource] by
- Luo, Dongxiang
- Zhao, Mingjie
- Xu, Miao
- Li, Min
- Chen, Zikai
- Wang, Lang
- Zou, Jianhua
- Tao, Hong
- Wang, Lei
- Peng, Junbiao
Producer: 20150409
In:
ACS applied materials & interfaces vol. 6
Availability: No items available.
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