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Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. [electronic resource] by
- Shah, Vishal Ajit
- Myronov, Maksym
- Wongwanitwatana, Chalermwat
- Bawden, Lewis
- Prest, Martin J
- Richardson-Bullock, James S
- Rhead, Stephen
- Parker, Evan H C
- Whall, Terrance E
- Leadley, David R
Publication details: Science and technology of advanced materials Oct 2012
In:
Science and technology of advanced materials vol. 13
Availability: No items available.
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