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	81.	Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space. [electronic resource] by Hrauda, N Zhang, J J Süess, M J Wintersberger, E Holý, V Stangl, J Deiter, C Seeck, O H Bauer, G Producer: 20130326 In: Nanotechnology vol. 23 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)

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