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Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors. [electronic resource] by
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- Gutacker, Andrea
- Yuen, Jonathan D
- Huang, Fei
- Cao, Yong
- Bazan, Guillermo C
- Samuel, Ifor D W
- Heeger, Alan J
Producer: 20120612
In:
Advanced materials (Deerfield Beach, Fla.) vol. 24
Availability: No items available.
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High-frequency self-aligned graphene transistors with transferred gate stacks. [electronic resource] by
- Cheng, Rui
- Bai, Jingwei
- Liao, Lei
- Zhou, Hailong
- Chen, Yu
- Liu, Lixin
- Lin, Yung-Chen
- Jiang, Shan
- Huang, Yu
- Duan, Xiangfeng
Producer: 20121011
In:
Proceedings of the National Academy of Sciences of the United States of America vol. 109
Availability: No items available.
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Effect of self-assembled monolayers on charge injection and transport in poly(3-hexylthiophene)-based field-effect transistors at different channel length scales. [electronic resource] by
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- Nelson, T L
- Belot, J A
- Young, T M
- Dhumal, N R
- Kowalewski, T
- McCullough, R D
- Nachimuthu, P
- Thevuthasan, S
- Porter, L M
Producer: 20111220
In:
ACS applied materials & interfaces vol. 3
Availability: No items available.
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