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Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure. [electronic resource] by
- Kim, Hyun-Min
- Kwon, Dae Woong
- Kim, Sihyun
- Lee, Kitae
- Lee, Junil
- Park, Euyhwan
- Lee, Ryoongbin
- Kim, Hyungjin
- Kim, Sangwan
- Park, Byung-Gook
Publication details: Journal of nanoscience and nanotechnology 09 2018
In:
Journal of nanoscience and nanotechnology vol. 18
Availability: No items available.
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