Coulomb-blockade oscillations in the conductance of a silicon metal-oxide-semiconductor field-effect-transistor point contact.  [electronic resource] 

 -  Physical review. B, Condensed matter  Oct 1991 
 - 9072-9075 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>0163-1829 
<br/><br/><label>Standard No.: </label>10.1103/physrevb.44.9072  doi