Ground-state properties of isolated interstitial iron in silicon: Electronic structure and hyperfine interactions.  [electronic resource] 

 -  Physical review. B, Condensed matter  Aug 1996 
 - 4680-4695 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>0163-1829 
<br/><br/><label>Standard No.: </label>10.1103/physrevb.54.4680  doi