Direct determination of exact charge states of surface point defects using scanning tunneling microscopy: As vacancies on GaAs (110).  [electronic resource] 

 -  Physical review. B, Condensed matter  Mar 1996 
 - 6935-6938 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>0163-1829 
<br/><br/><label>Standard No.: </label>10.1103/physrevb.53.6935  doi