Band discontinuity at the (311)A GaAs/AlAs interface and possibility of its control by Si insertion layers.  [electronic resource] 

 -  Physical review. B, Condensed matter  Dec 1994 
 - 17242-17248 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>0163-1829 
<br/><br/><label>Standard No.: </label>10.1103/physrevb.50.17242  doi