Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As.  [electronic resource] 

 -  Physical review. B, Condensed matter  Dec 1987 
 - 9569-9580 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>0163-1829 
<br/><br/><label>Standard No.: </label>10.1103/physrevb.36.9569  doi