Prucnal, Slawomir <br/><br/>
Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing.  [electronic resource] 

 -  Materials (Basel, Switzerland)  Mar 2020 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1996-1944 
<br/><br/><label>Standard No.: </label>10.3390/ma13061408  doi