Kim, Zin-Sig <br/><br/>
Effects of Recess Depth Under the Gate Area on the   [electronic resource] 

 -  Journal of nanoscience and nanotechnology  Jul 2020 
 - 4170-4175 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1533-4899 
<br/><br/><label>Standard No.: </label>10.1166/jnn.2020.17783  doi