Xu, Shengqiang <br/><br/>
Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band.  [electronic resource] 

 -  Optics express  Sep 2019 
 - 26924-26939 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1094-4087 
<br/><br/><label>Standard No.: </label>10.1364/OE.27.026924  doi