Fatahilah, Muhammad Fahlesa <br/><br/>
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.  [electronic resource] 

 -  Scientific reports  Jul 2019 
 - 10301 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>2045-2322 
<br/><br/><label>Standard No.: </label>10.1038/s41598-019-46186-9  doi