Park, Ye-Jin <br/><br/>
Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure.  [electronic resource] 

 -  Journal of nanoscience and nanotechnology  Apr 2019 
 - 2298-2301 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1533-4880 
<br/><br/><label>Standard No.: </label>10.1166/jnn.2019.15991  doi