Kao, Yun-Feng <br/><br/>
A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model.  [electronic resource] 

 -  Nanoscale research letters  Jul 2018 
 - 213 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1931-7573 
<br/><br/><label>Standard No.: </label>10.1186/s11671-018-2619-x  doi