Ahn, Yoonho <br/><br/>
Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films.  [electronic resource] 

 -  Nanoscale  Jul 2018 
 - 13443-13448 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>2040-3372 
<br/><br/><label>Standard No.: </label>10.1039/c8nr02986e  doi