Li, Xin <br/><br/>
Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.  [electronic resource] 

 -  Scientific reports  04 2017 
 - 786 p.  digital 
<br/><br/> Publication Type: Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>2045-2322 
<br/><br/><label>Standard No.: </label>10.1038/s41598-017-00865-7  doi