Soltamov, V A <br/><br/>
Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure.  [electronic resource] 

 -  Physical review letters  Dec 2015 
 - 247602 p.  digital 
<br/><br/> Publication Type: Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>1079-7114 
<br/><br/><label>Standard No.: </label>10.1103/PhysRevLett.115.247602  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Carbon Compounds, Inorganic--chemistry<br/>Crystallization<br/>Electron Spin Resonance Spectroscopy--methods<br/>Models, Chemical<br/>Quantum Theory<br/>Silicon Compounds--chemistry