Verbitskiy, N I <br/><br/>
Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation.  [electronic resource] 

 -  Scientific reports  Dec 2015 
 - 17700 p.  digital 
<br/><br/> Publication Type: Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>2045-2322 
<br/><br/><label>Standard No.: </label>10.1038/srep17700  doi