Mao, Ling-Feng <br/><br/>
The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?  [electronic resource] 

 -  PloS one  2015 
 - e0128438 p.  digital 
<br/><br/> Publication Type: Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>1932-6203 
<br/><br/><label>Standard No.: </label>10.1371/journal.pone.0128438  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Aluminum Compounds--chemistry<br/>Electricity<br/>Electronics--instrumentation<br/>Electrons<br/>Gallium--chemistry<br/>Humans<br/>Transistors, Electronic