TY  - GEN
AU  - Bak,Jun Yong
AU  - Kang,Youngho
AU  - Yang,Shinhyuk
AU  - Ryu,Ho-Jun
AU  - Hwang,Chi-Sun
AU  - Han,Seungwu
AU  - Yoon,Sung-Min
TI  - Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers
SN  - 2045-2322
PY  - 2015///0630
N1  - Publication Type: Journal Article; Research Support, Non-U.S. Gov't
UR  - https://doi.org/10.1038/srep07884
ER  -