Bak, Jun Yong <br/><br/>
Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers.  [electronic resource] 

 -  Scientific reports  Jan 2015 
 - 7884 p.  digital 
<br/><br/> Publication Type: Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>2045-2322 
<br/><br/><label>Standard No.: </label>10.1038/srep07884  doi