Seung, Hyun-Min

Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode. [electronic resource] - Nanotechnology Oct 2014 - 435204 p. digital

Publication Type: Journal Article; Research Support, Non-U.S. Gov't

1361-6528

10.1088/0957-4484/25/43/435204 doi