Ryoo, Kyung-Chang <br/><br/>
Dimensional effect of non-polar resistive random access memory (RRAM) for low-power memory application.  [electronic resource] 

 -  Journal of nanoscience and nanotechnology  Jul 2012 
 - 5270-5 p.  digital 
<br/><br/> Publication Type: Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>1533-4880 
<br/><br/><label>Standard No.: </label>10.1166/jnn.2012.6233  doi