Gautier, Gael <br/><br/>
Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces.  [electronic resource] 

 -  Nanoscale research letters  Jul 2012 
 - 367 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1556-276X 
<br/><br/><label>Standard No.: </label>10.1186/1556-276X-7-367  doi