Sato, Keisuke <br/><br/>
Electronic level scheme in boron- and phosphorus-doped silicon nanowires.  [electronic resource] 

 -  Nano letters  Jun 2012 
 - 3012-7 p.  digital 
<br/><br/> Publication Type: Journal Article; Research Support, Non-U.S. Gov't 
<br/><br/><label>ISSN: </label>1530-6992 
<br/><br/><label>Standard No.: </label>10.1021/nl300802x  doi 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Boron--chemistry<br/>Electron Transport<br/>Materials Testing<br/>Nanostructures--chemistry<br/>Phosphorus--chemistry<br/>Silicon--chemistry