Tseng, Yuan Heng <br/><br/>
Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise.  [electronic resource] 

 -  Journal of applied physics  Apr 2012 
 - 73701-737015 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>0021-8979 
<br/><br/><label>Standard No.: </label>10.1063/1.3691224  doi