Wang, T H <br/><br/>
Electronic structure analysis for group III acceptors in Ge under stress considering screening effect and central-cell correction.  [electronic resource] 

 -  Journal of physics. Condensed matter : an Institute of Physics journal  Aug 2009 
 - 335801 p.  digital 
<br/><br/> Publication Type: Journal Article 
<br/><br/><label>ISSN: </label>1361-648X 
<br/><br/><label>Standard No.: </label>10.1088/0953-8984/21/33/335801  doi